IRF7421D1PBF

www.DataSheet4U.com PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A S S G 1 2 3 4 8 7 A A D D D D VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.39V 6 5 Description Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10Và Pulsed Drain Current À Power Dissipation à Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Á Junction and Storage Temperature Range Maximum 5.8 4.6 46 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Am...