INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF741
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRF741
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.55Ω(Max) ·Fast Switching Speed
APPLICATIONS ·Designed especially for high
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
350 V
VGS Gate-Source
Voltage
±20
V
ID Drain Current-continuous@ TC=25℃ 10 A
Ptot Total Dissipation@TC=25℃
125 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
isc Product Specification
IRF741
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate
Voltage Drain Current VDS= 350V; VGS= 0
VSD Diode Forward
Voltage
IF= 10A; VGS= 0
MIN MAX UNIT 350 V
24V 0.55 Ω ±500 nA ...