INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF732
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRF732
DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) ·Fast Switching Speed
APPLICATIONS ·Designed especially for high
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source
Voltage (VGS=0) Gate-Source
Voltage
400 ±20
V V
Drain Current-continuous@ TC=25℃ 4.5 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
1.67 80
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
isc Product Specification
IRF732
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.0A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate
Voltage Drain Current VDS=400V; VGS= 0
VSD Diode Forward
Voltage
IF= 5.5A; VGS= 0
MIN MAX UNIT 400 V
24V 1.5 Ω
±500 nA 2...