IRF7317

PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 P -C H AN N E L MO S FET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. RDS(on) 0.029Ω 0.058Ω T o p V ie w S O -8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 100 4.1 0.20 5.0 -5.0 -55 to + 150 °C N-Channel 20 6.6 5.3 26 2.5 2.0 1.3 150 -2.9 Maximum P-Channel -20 ± 12 -5.3 -4.3 -21 -2.5 Units V Pulsed Drain Current Continuous S...