PD - 9.1436B
PRELIMINARY
l l l l l
IRF7314
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance D...
PD - 9.1436B
PRELIMINARY
l l l l l
IRF7314
HEXFET® Power
MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel
MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS = -20V RDS(on) = 0.058Ω
3
6
4
5
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current
TA = 25°C TA = 70°C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG
Maximum
-20 ± 12 -5.3 -4.3 -21 -2.5 2.0 1.3 150 -2.9 0.20 -5.0 -55 to + 150
Units
V
Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation
TA = 70°C Single Pulse Avalanche Energy Avalanche Current Rep...