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IRF730AS Datasheet

Part Number IRF730AS
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRF730AS DatasheetIRF730AS Datasheet (PDF)

www.DataSheet4U.com PD-93772A SMPS MOSFET IRF730AS/L HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001) l VDSS 400V Rds(on) max 1.0Ω ID 5.5A D 2 Pak T O -26 2 Absolute Maximum Ratings P.

  IRF730AS   IRF730AS






Part Number IRF730AS
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF730AS DatasheetIRF730AS Datasheet (PDF)

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) 400 VGS = 10 V 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration Single 1.0 D I2PAK (TO-262) D2PAK (TO-263) G DS G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanc.

  IRF730AS   IRF730AS







SMPS MOSFET

www.DataSheet4U.com PD-93772A SMPS MOSFET IRF730AS/L HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001) l VDSS 400V Rds(on) max 1.0Ω ID 5.5A D 2 Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V† Continuous Drain Current, VGS @ 10V† Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.5 3.5 22 74 0.6 ± 30 4.6 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). through † are on page 10 Notes  www.irf.com 1 5/8/00 IRF730AS/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Un.


2007-01-10 : 1102B    1106B    1102FB    1106FB    1102UFB    1106UFB    1110B    1110FB    1110UFB    1102C   


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