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IRF720B Datasheet

Part Number IRF720B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 400V N-Channel MOSFET
Datasheet IRF720B DatasheetIRF720B Datasheet (PDF)

IRF720B/IRFS720B November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies .

  IRF720B   IRF720B






Part Number IRF720S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF720B DatasheetIRF720S Datasheet (PDF)

www.vishay.com IRF720S, SiHF720S, IRF720L, SiHF720L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling • Simple drive requirements Available • Material categor.

  IRF720B   IRF720B







Part Number IRF720L
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF720B DatasheetIRF720L Datasheet (PDF)

www.vishay.com IRF720S, SiHF720S, IRF720L, SiHF720L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated Available • Fast switching • Ease of paralleling • Simple drive requirements Available • Material categor.

  IRF720B   IRF720B







Part Number IRF720FI
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF720B DatasheetIRF720FI Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF720FI ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-.

  IRF720B   IRF720B







Part Number IRF720A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet IRF720B DatasheetIRF720A Datasheet (PDF)

www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 1.408Ω (Typ.) 1 2 3 IRF720A BVDSS = 400 V RDS(on) = 1.8Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drai.

  IRF720B   IRF720B







400V N-Channel MOSFET

IRF720B/IRFS720B November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • • • • • • 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF720B 400 3.3 2.1 13.2 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS720B 3.3 * 2.1 * 13.2 * 240 3.3 4.9 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 49 0.39 -5.


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