PD - 93944C
AUTOMOTIVE MOSFET
Typical Applications
q q q
IRF7103Q
HEXFET® Power MOSFET
Anti-lock Braking Systems (ABS...
PD - 93944C
AUTOMOTIVE
MOSFET
Typical Applications
q q q
IRF7103Q
HEXFET® Power
MOSFET
Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel
MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified
S1
VDSS
50V
RDS(on) max (mΩ)
130@VGS = 10V 200@VGS = 4.5V
ID
3.0A 1.5A
Benefits
q q q q q q
1
8
D1 D1 D2 D2
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual
MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available
G1 S2 G2
2
7
3
6
4
5
T o p V ie w
SO-8
in Tape & Reel.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Curren...