PD - 9.1095B
IRF7103
HEXFET® Power MOSFET
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Adavanced Process Technology Ultra Low On-Resistance Dual N-Ch...
PD - 9.1095B
IRF7103
HEXFET® Power
MOSFET
l l l l l l l
Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel
MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = 50V RDS(on) = 0.130Ω ID = 3.0A
3
6
4
5
Top View
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3...