PD - 97204
PROVISIONAL
l l l l l l l l l
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qrr
26nC
IRF6691PbF IRF6691TRPbF
RDS(on) Vgs(th)
2.0V
VDSS
tot
VGS
20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ .
Power MOSFET
PD - 97204
PROVISIONAL
l l l l l l l l l
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qrr
26nC
IRF6691PbF IRF6691TRPbF
RDS(on) Vgs(th)
2.0V
VDSS
tot
VGS
20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V
Qg
Qgd
15nC
Qgs2
4.4nC
Qoss
30nC
47nC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
MT
DirectFET ISOMETRIC
Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching loss.