IRF6648

PD - 97043C IRF6648 DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Optimized for Synchronous Rectification for 5V to 12V outputs l Ideal for 24V input Primary Side Forward Converters l Low Conduction Losses l Compatible with Existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS VGS RDS(on) Qg tot Qgd 60V max ±20V max 5.5mΩ@ 10V 36nC 14nC MN Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN DirectFET™ ISOMETRIC Description The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The re...