IRF6645

www.DataSheet4U.com PD - 97006 IRF6645 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.8nC RDS(on) 28mΩ@ 10V 100V max ±20V max Vgs(th) 4.0V 14nC SJ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN DirectFET™ ISOMETRIC Description The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V -...