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PD - 97262
IRF6641TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
RoH...
www.DataSheet4U.com
PD - 97262
IRF6641TRPbF
DirectFET Power
MOSFET
Typical values (unless otherwise specified)
RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific
MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
VDSS Qg
tot
VGS Qgd
9.5nC
RDS(on)
51mΩ@ 10V
200V max ±20V max 34nC
Vgs(th)
4.0V
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN
DirectFET ISOMETRIC
Description
The IRF6641PbF combines the latest HEXFET® Power
MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V75V input
voltage range systems. The reduced total l...