IRF6616TRPBF

IRF6616PbF IRF6616TRPbF RoHS compliant containing no lead or bormide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l Lead-Free l PD - 96100 Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS VGS RDS(on) RDS(on) 40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V Qg tot Qgd 9.4nC Qgs2 2.4nC Qrr 33nC Qoss 15nC Vgs(th) 1.8V 29nC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP DirectFET ™ ISOMETRIC Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total loss...