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IRF654B Datasheet

Part Number IRF654B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 250V N-Channel MOSFET
Datasheet IRF654B DatasheetIRF654B Datasheet (PDF)

IRF654B/IRFS654B November 2001 IRF654B/IRFS654B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters .

  IRF654B   IRF654B






Part Number IRF654A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF654B DatasheetIRF654A Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF654A ·FEATURES ·Avalanche Rugged Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Low RDS(ON) : 0.108 Ω (Typ.) ·DESCRITION ·designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly fr.

  IRF654B   IRF654B







Part Number IRF654A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet IRF654B DatasheetIRF654A Datasheet (PDF)

Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.108 Ω (Typ.) IRF654A BVDSS = 250 V RDS(on) = 0.14 Ω ID = 21 A TO-220 1 2 3 www.DataSheet4U.com 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous .

  IRF654B   IRF654B







Part Number IRF654
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 250V N-Channel MOSFET
Datasheet IRF654B DatasheetIRF654 Datasheet (PDF)

IRF654B/IRFS654B November 2001 IRF654B/IRFS654B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters .

  IRF654B   IRF654B







250V N-Channel MOSFET

IRF654B/IRFS654B November 2001 IRF654B/IRFS654B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • • • • • • 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF654B 250 21 13.3 84 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS654B 21 * 13.3 * 84 * 700 21 15.6 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 156 1.25 -55 to +150 300 50 0.4 .


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