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IRF640 Datasheet

Part Number IRF640
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet IRF640 DatasheetIRF640 Datasheet (PDF)

® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard pa.

  IRF640   IRF640






Part Number IRF640
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet IRF640 DatasheetIRF640 Datasheet (PDF)

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bi.

  IRF640   IRF640







Part Number IRF640
Manufacturers WEITRON
Logo WEITRON
Description N-Channel Enhancement Mode POWER MOSFET
Datasheet IRF640 DatasheetIRF640 Datasheet (PDF)

N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance 2 SOURCE IRF640 DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 200 VOLTAGE 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rat.

  IRF640   IRF640







Part Number IRF640
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF640 DatasheetIRF640 Datasheet (PDF)

IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.

  IRF640   IRF640







Part Number IRF640
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description N-Channel Enhancement Mode Power MOS Transistors
Datasheet IRF640 DatasheetIRF640 Datasheet (PDF)

SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and lighting equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Curre.

  IRF640   IRF640







Part Number IRF640
Manufacturers nELL
Logo nELL
Description N-Channel Power MOSFET
Datasheet IRF640 DatasheetIRF640 Datasheet (PDF)

SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for h.

  IRF640   IRF640







N-Channel MOSFET

® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. TO-220 TO-220FP APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter IRF640 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 18 11 72 125 1.0 5  -65 to 150 150 200 200 ± 20 18(**) 11(**) 72 40 0.32 5 2000 Value IRF 640F P V V V A A A W W/ C V/ns V o o o Un it C C (•) Pulse width limited by safe operating area ( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identif.


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