Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resista...
Isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
200
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
9.3
PD
Total Dissipation @TC=25℃
82
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
IRF630NS
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
isc website：www.iscsemi.cn
MAX 1.83
UNIT ℃/W
1 isc & iscsemi is registered trademark
Isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 250uA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID= 250uA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 5.4A
IGSS
Gate-Source Leakage Current
VGS= ±20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 200V; VGS= 0V
VSD
Diode forward
voltage
IS= 5.4A, VGS = 0V
IRF630NS
MIN TYP MAX UNIT
200
V
2
4
V
300 mΩ
±100 nA
25
μA
1.3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pre...
