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IRF6217 Datasheet

Part Number IRF6217
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF6217 DatasheetIRF6217 Datasheet (PDF)

PD - 94359 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters IRF6217 HEXFET® Power MOSFET RDS(on) max 2.4Ω@VGS =-10V ID -0.7A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S 1 8 7 A D D D D S S G 2 3 6 4 5 T op V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = .

  IRF6217   IRF6217






Part Number IRF621FI
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet IRF6217 DatasheetIRF621FI Datasheet (PDF)

IRF 620/FI-621/FI IRF 622/FI-623/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI Voss 200 V 200 V 150 V 150 V 200 V 200 V 150 V 150 V Ros(on) 0.8 0 0.8 0 0.80 0.8 0 1.2 0 1.2 0 1.2 0 1.2 0 10 • 5A 4A 5A 4A 4A 3.5 A 4A 3.5 A e 200V FOR TELECOMMUNICATION APPLICATIONS e ULTRA FAST SWITCHING e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • e EASY DRIVE - REDUCES COST AND SIZE TO-220 ISOWATT220 INDUSTRIAL APPL.

  IRF6217   IRF6217







Part Number IRF6218SPbF
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet IRF6217 DatasheetIRF6218SPbF Datasheet (PDF)

  SMPS MOSFET Applications  Reset Switch for Active Clamp Reset DC-DC converters VDSS - 150V IRF6218SPbF HEXFET® Power MOSFET RDS(on) (max) 150m@ VGS = -10V ID -27A Benefits  Low Gate to Drain Charge to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)  Fully Characterized Avalanche Voltage and Current  Lead-Free G Gate D Drain D S G D2 Pak IRF6218SPbF S Source Base part number Package Type IRF6218SPbF .

  IRF6217   IRF6217







Part Number IRF6218S
Manufacturers INCHANGE
Logo INCHANGE
Description P-Channel MOSFET
Datasheet IRF6217 DatasheetIRF6218S Datasheet (PDF)

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤150mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -27 PD Total Dissipation @TC=25℃ 250 Tj.

  IRF6217   IRF6217







Part Number IRF6218S
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF6217 DatasheetIRF6218S Datasheet (PDF)

Applications l Reset Switch for Active Clamp Reset DC-DC converters SMPS MOSFET PD - 95863 IRF6218S IRF6218L HEXFET® Power MOSFET VDSS RDS(on) max ID :-150V 150m @VGS = -10V -27A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current G D D2Pak TO-262 S IRF6218S IRF6218L Absolute Maximum Ratings Parameter VDS Drain-to-Source.

  IRF6217   IRF6217







Part Number IRF6218PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF6217 DatasheetIRF6218PBF Datasheet (PDF)

www.DataSheet4U.com PD -95441 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free l IRF6218PbF HEXFET® Power MOSFET -150V 150m:@VGS = -10V VDSS RDS(on) max ID -27A Benefits l l D l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current G S TO-220AB Absolute Maximum Ratings Parameter VDS VGS ID @ TC = .

  IRF6217   IRF6217







HEXFET Power MOSFET

PD - 94359 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC to DC converters IRF6217 HEXFET® Power MOSFET RDS(on) max 2.4Ω@VGS =-10V ID -0.7A l VDSS -150V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S 1 8 7 A D D D D S S G 2 3 6 4 5 T op V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -0.7 -0.5 -5.0 2.5 0.02 ± 20 4.5 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 02/13/02 IRF6217 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 ––– ––– -3.0 ––– ––– ––– ––– Ty.


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