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IRF614 Datasheet

Part Number IRF614
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet IRF614 DatasheetIRF614 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF614 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V .

  IRF614   IRF614






Part Number IRF614
Manufacturers International Rectifier
Logo International Rectifier
Description power mosfet
Datasheet IRF614 DatasheetIRF614 Datasheet (PDF)

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  IRF614   IRF614







Part Number IRF614
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet IRF614 DatasheetIRF614 Datasheet (PDF)

IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requir.

  IRF614   IRF614







Part Number IRF614
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF614 DatasheetIRF614 Datasheet (PDF)

Power MOSFET IRF614, SiHF614 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the bes.

  IRF614   IRF614







N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF614 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 8A PD Total Dissipation @TC=25℃ 20 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 6.4 62.5 ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF614 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID= 1.5A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS=0 VSD Forward On-Voltage IS= 2A; VGS=0 MIN MAX UNIT 250 V 24V 2Ω ±500 .


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