DO D[]~[F~
FIELD EFFECT POWER TRANSISTOR
IRF612,613
2.0 AMPERES 200, 150 VOLTS
ROS(ON) = 2.4 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching appli...
