IRF6100

l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device. G The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipationƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Volta...