Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-brid...
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
D
G S
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free
G Gate
IR
MOSFET StrongIRFET™ IRHEFXF6E0TB® P2o1we7r
MOSFET
VDSS RDS(on) typ.
max ID
60V 7.3m 9.0m
60A
S D G TO-220AB IRF60B217
D Drain
S Source
Base part number IRF60B217
Package Type TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number IRF60B217
RDS(on), Drain-to -Source On Resistance ( m) ID , Drain Current (A)
30 ID = 36A
25
20 15 TJ = 125°C
10
5 TJ = 25°C
0 4 8 12 16
VGS, Gate-to-Source
Voltage (V)
20
Fig 1. Typical On-Resistance vs. Gate
Voltage
1
60
50
40
30
20
10
0 25
50 75 100 125 150 TC , CaseTemperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016– 01-05
IRF60B217
Absolute Maximum Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Max. 60 42 225 83 0.56
VGS Gate-to-So...