PD - 94028
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
IRF5Y5305CM 55V, P-CHANNEL
Product Summary
Part Number
IRF5Y5305...
PD - 94028
HEXFET® POWER
MOSFET THRU-HOLE (TO-257AA)
IRF5Y5305CM 55V, P-CHANNEL
Product Summary
Part Number
IRF5Y5305CM BVDSS
-55V
RDS(on) 0.065Ω
ID -18A*
Fifth Generation HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page -18* -15 -72 75 0.6 ±20 160 -16 7.5 3.0 -55 to 150 300 (0.063in....