PD - 94247
HEXFET® POWER MOSFET THRU-HOLE (TO-254AA)
IRF5M5210 100V, P-CHANNEL
Product Summary
Part Number
IRF5M5210 ...
PD - 94247
HEXFET® POWER
MOSFET THRU-HOLE (TO-254AA)
IRF5M5210 100V, P-CHANNEL
Product Summary
Part Number
IRF5M5210 BVDSS
-100V
RDS(on) 0.07Ω
ID -34A
Fifth Generation HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits.
TO-254AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight -34 -21 -136 125 1.0 ±20 520 -21 12.5 3.4 -55 to 150 300 (0.063in./1.6mm from case for 10s) 9.3 (Typical)
Units A
W
W/°C
V mJ A mJ V/ns...