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IRF5852

International Rectifier

Power MOSFET


Description
PD - 93999 IRF5852 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS 20 V RDS(on) max (Ω) 0.090@VGS = 4.5V 0.120@VGS = 2.5V ID 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely l...



International Rectifier

IRF5852

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