PD -94198
IRF5810
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-20V
RDS(on) max (mΩ)
90@VGS = -4.5V 135@VGS = -2.5V
ID
-2.9A -2.3A
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve th...
