IRF5805

PD -94029 IRF5805 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -30V RDS(on) max 0.098@VGS = -10V 0.165@VGS = -4.5V ID -3.8A -3.0A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. D 1 6 A D D 2 5 D G 3 4 S T o p V ie w TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -3.8 -3.0 -15 2 1.28 0.02 ± 20 -55 to + 150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 11/6/00 IRF5805 Electrical Chara...