IRF5804PbF

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. VDSS -40V PD - 95503B IRF5804PbF HEXFET® Power MOSFET RDS(on) max (mW) 198@VGS = -10V 334@VGS = -4.5V ID -2.5A -2.0A D1 6 A D D2 5D G3 4S Top View TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Max. -40 -2.5 -2.0 -10 2.0 1.3 0.016 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W 1 04/20/...