IRF5801PBF-1

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 2.20 3.9 0.6 V Ω nC A Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF5801PbF-1 HEXFET® Power MOSFET D1 D2 G3 6D 5D 4S TSOP-6 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF5801TRPbF-1 Package Type TSOP-6 Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRF5801TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient „ Notes  through † are on page 8 Max. 0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typ. ––– Max. 62.5 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 IRF5801PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-R...