IRF5801

PD-94044 SMPS MOSFET Applications l High frequency DC-DC converters IRF5801 HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2Ω ID 0.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D 1 6 A D D 2 5 D G 3 4 S T op V iew TSOP-6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient „ Typ. ––– Max. 62.5 Units °C/W Notes  through † are on page 8 www.irf.com 1 01/17/01 IRF5801 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID...