Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Advanced Power
MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.)
Ο
IRF540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 28 19.8
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C )
Ο
110 + _ 20 523 28 10.7 6.5 107 0.71 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
Ο
C
300
Thermal Resistance
Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.4 -62.5
Ο
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF540A
Ο
N-CHANNEL POWER
MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown
Voltage Breakdown
Voltage Tem...