www.vishay.com
IRF540
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)...
www.vishay.com
IRF540
Vishay Siliconix
Power
MOSFET
D TO-220AB
S D G
G
S N-Channel
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
72 11 32 Single
0.077
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
FEATURES
Dynamic dV/dt rating
Repetitive avalanche rated
Available
175 °C operating temperature Fast switching
Available
Ease of paralleling Simple drive requirements
Available
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRF540PbF IRF540PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current
Pulsed drain curre...