PD - 91352B
IRF530NS IRF530NL
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance
D
VDSS = 10...
PD - 91352B
IRF530NS IRF530NL
HEXFET® Power
MOSFET
l Advanced Process Technology l Ultra Low On-Resistance
D
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
RDS(on) = 90mΩ
l Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET® Power
MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications.
D2Pak IRF530NS
TO-262 IRF530NL
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source
Voltage Avalanche Current Repetitive...