Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 Ω (Typ.)
IRF510A
BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A
TO-220
1 2 3
1.Gate 2...
