isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤20mΩ(@VGS= -10V; ID= -38A) ·Advan...
isc P-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤20mΩ(@VGS= -10V; ID= -38A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS
Gate-Source
Voltage
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
IRF4905L
VALUE -55 ±20 -74 200
-55~175 -55~175
UNIT V V A W ℃ ℃
MAX 0.75
UNIT ℃/W
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isc P-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= -250μA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID= -250μA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -38A
IGSS
Gate-Source Leakage Current
VGS= ±20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= -55V; VGS= 0V
VSD
Diode forward
voltage
IS= -38A, VGS = 0V
IRF4905L
MIN TYP MAX UNIT
-55
V
-2
-4
V
20
mΩ
±100 nA
-25
μA
-1.6
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guid...