IRF3717PbF-1
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
Applications
20 V 4.4 mΩ ...
IRF3717PbF-1
HEXFET® Power
MOSFET
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
Applications
20 V 4.4 mΩ 22 nC 20 A
S1 S2 S3 G4
AA 8D 7D 6D 5D
Top View
SO-8
l Synchronous
MOSFET for Notebook Processor Power l Synchronous Rectifier
MOSFET for Isolated DC-DC Converters in Networking Systems
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number Package Type
IRF3717PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF3717PbF-1 IRF3717TRPbF-1
Absolute Maximum Ratings
Parameter VDS Drain-to-Source
Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Max. 20 ± 20 20 16 160 2.5 1.6
0.02 -55 to + 150
Units V
A W
W/°C °C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Notes through are on page 10
Typ. ––– –––
Max. 20 50
Units °C/W
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July 25, 2014
IRF3717PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter...