IRF3711L

PD- 94062D SMPS MOSFET IRF3711 IRF3711S IRF3711L Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity HEXFET® Power MOSFET VDSS 20V RDS(on) max ID 6.0mΩ 110A† Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3711 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation… Linear Derating Factor Junction and Storage Temperature Range D2Pak IRF3711S Max. 20 ± 20 110† 69 440 120 3.1 0.96 -55 to + 150 TO-262 IRF3711L Units V V A W W W/°C °C Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case ‡ Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„‡ Junction-to-Ambient (PCB mount)…‡ Typ. ––– 0.50 ––– ––– Max. 1.04 ––– 62 40 Units °C/W Notes  through ‡ are on page 11 www.irf.com 1 12/9/04 IRF3711/3711S/3711L Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ∆V(BR)DSS/∆TJ Breakdown Voltage Te...