PD -94424A
AUTOMOTIVE MOSFET
Typical Applications
●
IRF3007
HEXFET® Power MOSFET
D
42 Volts Automotive Electrical Sys...
PD -94424A
AUTOMOTIVE
MOSFET
Typical Applications
●
IRF3007
HEXFET® Power
MOSFET
D
42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified
Features
● ● ● ● ●
VDSS = 75V
G S
RDS(on) = 0.0126Ω ID = 75A
Description
Specifically designed for Automotive applications, this design of HEXFET® Power
MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power
MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Max.
80 56 75 320 200 1.3 ± 2...