IRF2807ZPBF

Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 9.4mΩ G ID = 75A S TO-220AB D2Pak TO-262 IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) c Pulsed Drain Current Maximum Power Dissipation VGS EAS EAS (tested) IAR EAR Linear Derating Factor Gate-to-Source Voltage d Single Pulse Avalanche Energy (Thermally Limited) i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction...