Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l ...
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95488A
IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF
HEXFET® Power
MOSFET
D
VDSS = 75V
RDS(on) = 9.4mΩ
G
ID = 75A
S
TO-220AB
D2Pak
TO-262
IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
VGS EAS EAS (tested) IAR EAR
Linear Derating Factor
Gate-to-Source
Voltage
d Single Pulse Avalanche Energy (Thermally Limited) i Single Pulse Avalanche Energy Tested Value c Avalanche Current h Repetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction...