LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF240SMD
N–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 ...
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF240SMD
N–CHANNEL POWER
MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
200V 13.9A 0.180W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE.
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES
SMD1 PACKAGE
Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
Note: IRFNxxx also available with pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ–PCB Gate – Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical)
2
±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) 13.9A 8.8A 56A 75W 0.6W/°C 450mJ 5.0V/ns –55 to 150°C 300°C 1.67°C/W 4°C/W
Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2...
