Semiconductor
IRF234, IRF235, IRF236, IRF237
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operatio...
