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IRF1310S

International Rectifier

Power MOSFET


Description
Previous Datasheet Index Next Data Sheet PD - 9.1221 IRF1310S HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...



International Rectifier

IRF1310S

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