PD - 94520
AUTOMOTIVE MOSFET
Benefits
● ● ● ● ● ●
IRF1302S IRF1302L
HEXFET® Power MOSFET
D
Advanced Process Technolog...
PD - 94520
AUTOMOTIVE
MOSFET
Benefits
● ● ● ● ● ●
IRF1302S IRF1302L
HEXFET® Power
MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 20V RDS(on) = 4.0mΩ
S
ID = 174A
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power
MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D2Pak IRF1302S
TO-262 IRF1302L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
174 120 700 200 1.4 ± 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-...