INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF120
DESCRIPTION ·Drain Current ID=...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRF120
DESCRIPTION ·Drain Current ID=8A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.3Ω(Max) ·Nanosecond Switching Speeds
APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio
amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source
Voltage (VGS=0) Gate-Source
Voltage
100 ±20
V V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
3.12 30
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate
Voltage Drain Current VDS=100V; VGS=0
VSD Diode Forward
Voltage
IS=8A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V...