PD - 94652A
AUTOMOTIVE MOSFET
IRF1010Z IRF1010ZS IRF1010ZL
HEXFET® Power MOSFET
D
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 55V RDS(on) = 7.5mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSF...