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IRF101 Datasheet

Part Number IRF101
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet IRF101 DatasheetIRF101 Datasheet (PDF)

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  IRF101   IRF101






Part Number IRF10N40
Manufacturers Suntac Electronic
Logo Suntac Electronic
Description POWER MOSFET
Datasheet IRF101 DatasheetIRF10N40 Datasheet (PDF)

! GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devic.

  IRF101   IRF101







Part Number IRF1018ESPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF101 DatasheetIRF1018ESPbF Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: G max. 8.4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Ga.

  IRF101   IRF101







Part Number IRF1018ESLPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF101 DatasheetIRF1018ESLPbF Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: G max. 8.4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Ga.

  IRF101   IRF101







Part Number IRF1018ES
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRF101 DatasheetIRF1018ES Datasheet (PDF)

Isc N-Channel MOSFET Transistor IRF1018ES ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 79 56 31.

  IRF101   IRF101







Part Number IRF1018EPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF101 DatasheetIRF1018EPbF Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: G max. 8.4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Ga.

  IRF101   IRF101







N-Channel Power MOSFET

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