IR51HD214

Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.058D IR51HD214 SELF-OSCILLATING HALF-BRIDGE Features n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 2.0Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT f = Description The IR51HD214 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 250 volts. Package IR51HD214 9506 Typical Connection U P TO 250V D C B U S V IN IR 5 1 H D 2 1 4 1 V C C V ...