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Data Sheet No. PD-6.058D
IR51H214
SELF-OSCILLATING HALF-BRIDGE
Features
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Data Sheet No. PD-6.058D
IR51H214
SELF-OSCILLATING HALF-BRIDGE
Features
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Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 2.0Ω 2.0W
Output Power
MOSFETs in half-bridge configuration 250V Rated Breakdown
Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power
MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of phase with RT
f =
Description
The IR51H214 is a high
voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune
CMOS technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the
CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power
MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 250 volts.
Package
IR51H214 9506
Typical Connection
U P TO 250V DC BU S V IN
IR 5 1 H 2 1 4
1
V CC V B
6
2
R T V IN
9
RT 3
C T VO
7
CT 4
COM
TO ...