IR2304

Data Sheet No. PD60200 revB IR2304(S) & (PbF) Features Floating channel designed for bootstrap operation to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Under voltage lockout for both channels 3.3V, 5V, and 15V input logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels Lower di/dt gate driver for better noise immunity Internal 100ns dead-time Output in phase with input Available in Lead-Free HALF-BRIDGE DRIVER Product Summary VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) Package 600V max. 60 mA/130 mA 10 - 20V 50 ns 100 ns 220/220 ns Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. 8-Lead PDIP 8 Lead SOIC 2106/2301/2108/2109/2302/2304 Feature Comparison Part Input logic 2106/2301 21064 2108 21084 2109/2302 21094 2304 HIN/LIN HIN/LIN IN/SD HIN/LIN Crossconduction prevention logic no yes yes yes Dead-...